| PART |
Description |
Maker |
| 97SD3248RPQK 97SD3248 97SD3248RPQE 97SD3248RPQH 97 |
1.5Gb SDRAM 8-Meg X 48-Bit X 4-Banks
|
MAXWELL[Maxwell Technologies]
|
| VSC8021 VSC8021FC VSC8021FI VSC8022FC VSC8022FI |
2.5Gb/s SONET-Compatible 8-Bit MUX/DEMUX Chipset 容量高达2.5GB / sSONET的兼解复用器芯片
|
Vitesse Semiconductor Corporation.
Vitesse Semiconductor, Corp.
|
| MT48H32M16LFCJ-8L MT48H16M32LFCJ-8LIT MT48H16M32LG |
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
|
Micron Technology, Inc.
|
| MT8LSDT864A MT8LSDT864AG-10B MT8LSDT864AG-10C MT8L |
8,16 MEG x 64 SDRAM DIMMs
|
MICRON[Micron Technology]
|
| MT16LSDT464A |
4 Meg x 64 SDRAM DIMMs(4M x 64????ㄦ?RAM,????存?瀛???ㄦā??
|
Micron Technology, Inc.
|
| AS4SD4M16DG-8_XT AS4SD4M16 AS4SD4M16DG-10_IT AS4SD |
4 Meg x 16 SDRAM Synchronous DRAM Memory
|
AUSTIN[Austin Semiconductor]
|
| AS4SD16M16DG-75/IT AS4SD16M16DG-75/XT |
256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory
|
Austin Semiconductor
|
| AS4SD32M16DGC-75_ET AS4SD32M16DGC-75_IT AS4SD32M16 |
512Mb: 32 Meg x 16 SDRAM Synchronous DRAM Memory
|
Austin Semiconductor
|
| MT48H4M16LFB4-75ITH MT48H4M16LFB4-8ITH |
4M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
Mobile SDRAM MT48H4M16LF ?1 Meg x 16 x 4 banks
|
Micron Technology
|
| VSC7146RH VSC7146 |
2.5Gb/s, 20-Bit Transceiver
|
Vitesse Semiconductor Corporation
ETC
|
| 48SD3208RPFE 48SD3208RPFH 48SD3208RPFK |
CAP 1.5UF 50V CERAMIC MONO 20% 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDFP72
256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDFP72
|
Maxwell Technologies, Inc
|
| IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位）
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
